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| VBO 20 Single Phase Rectifier Bridge Standard and Avalanche Types VRSM VBRmin V 900 1300 1500 1700 V 1230 1430 1630 VRRM V 800 1200 1400 1600 Standard Type VBO 20-08NO2 VBO 20-12NO2 VBO 20-14NO2 VBO 20-16NO2 Avalanche Type VBO 20-12AO2 VBO 20-14AO2 VBO 20-16AO2 + IdAV = 31 A VRRM = 800-1600 V ~ - ~ ~ - + ~ For Avalanche Types only Symbol IdAV IdAVM PRSM IFSM Test Conditions TC = 85C, module module TVJ = TVJM t = 10 s TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 31 40 3.4 300 315 250 265 450 420 312 290 -40...+150 150 -40...+125 A A kW A A A A A2s A2s A2s A2s C C C V~ V~ Nm lb.in. g Features * Avalanche rated parts available * Package with DCB ceramic base plate * Isolation voltage 3600 V~ * Planar passivated chips * Low forward voltage drop * 1/4" fast-on terminals * UL registered E 72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with one screw * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 1.5-2 13-18 15 Mounting torque (M5) (10-32 UNF) typ. Test Conditions VR = VRRM; VR = VRRM; IF = 55 A; TVJ = 25C TVJ = TVJM TVJ = 25C Characteristic Values 0.3 5 1.6 0.85 14 3.0 0.75 3.4 0.85 13 9.5 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2 For power-loss calculations only TVJ = TVJM per diode, DC current per module per diode, DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated for resistive load at bridge output, with isolated fast-on tabs. IXYS reserves the right to change limits, test conditions and dimensions. 420 (c) 2004 IXYS All rights reserved 1-2 VBO 20 Fig. 1 Surge overload current per diode IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) per diode Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature Constants for ZthJK calculation: i 1 2 3 Rthi (K/W) 0.775 1.390 1.255 ti (s) 0.0788 0.504 3.701 Fig. 5 Transient thermal impedance junction to heatsink per diode IXYS reserves the right to change limits, test conditions and dimensions. 2-2 (c) 2004 IXYS All rights reserved 420 |
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